V-shape magnetic field sensor with anisotropy induced orthogonal magnetic alignment
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United States of America Patent
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Sep 18, 2007
Grant Date -
Nov 20, 2003
app pub date -
Nov 26, 2002
filing date -
May 15, 2002
priority date (Note) -
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Abstract
A magnetoresistive sensor having two free layers with shape anisotropy induced magnetic alignment is disclosed. The magnetoresistive sensor includes a first ferromagnetic free layer having a first quiescent state magnetization direction. The magnetoresistive sensor also includes a second elongated free layer having a second quiescent state magnetization direction and positioned such that the first quiescent state magnetization direction is generally orthogonal to the second quiescent state magnetization direction. Further, a portion of the second ferromagnetic free layer overlaps a portion of the first ferromagnetic free layer proximal to an air bearing surface to form a v-shape. A nonmagnetic spacer layer is also positioned between the first ferromagnetic free layer and the second ferromagnetic free layer.
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