Integrated semiconductor circuit with protective structure for protection against electrostatic discharge
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United States of America Patent
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Nov 20, 2001
Grant Date -
N/A
app pub date -
Sep 30, 1998
filing date -
Sep 30, 1997
priority date (Note) -
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status (Latency Note)
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Abstract
An integrated semiconductor circuit has a protective structure for protection against electrostatic discharge. The protective element has at least one integrated vertical protective transistor whose load path is connected between the terminal pad of the device and a busbar. The base and the collector of the protective transistor are laterally offset with respect to one another. In particular, the distance between the base and the collector is increased by lateral structuring of the collector of the protective transistor, which collector is constructed as a buried layer. In this way, it is possible to increase the breakdown voltage U.sub.CB and thus also the withstand voltage of the protective elements. The invention is particularly advantageous if the protective transistor is driven by a diode whose breakdown lies in the range of the withstand voltage of the protective transistor. The drive sensitivity of the base can be established, moreover, by an integrated resistor formed in the base zone.
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