Membrane mask for projection lithography
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United States of America Patent
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Nov 16, 1999
Grant Date -
N/A
app pub date -
Apr 8, 1998
filing date -
Apr 8, 1998
priority date (Note) -
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Abstract
An improved, scattering-type mask for use in a charged-particle beam lithography process comprises the mask having a membrane portion and a scattering portion, the membrane portion being fabricated with a conductive material or a plurality of materials in which one of them is conductive. The conductive nature of the membrane portion mitigates the accumulation of charge in the mask, thereby enhancing the definition of the charged-particle pattern transferred from the mask onto the wafer under fabrication and reducing the distortion obtained with the system.
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