System and method for automatic analysis of defect material on semiconductors
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United States of America Patent
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Jun 18, 2002
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app pub date -
Feb 23, 1999
filing date -
Feb 23, 1999
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Abstract
A method and system for automatic EDX analysis of defects quantitatively take into consideration x-ray signals attributable to the background. The method and system are capable of automatically identifying suitable locations for background and defect x-ray sampling. The method and system are also capable of effectively and quantitatively, rather than qualitatively, removing signals attributable to the background and not the defect. One advantageous feature that enables the method and system to have a high throughput is termed 'trace element analysis.' The method and system are particularly beneficial for analysis of defects on semiconductor wafers and, due to automation, are suitable for in-line inspection of wafers in the fabrication plant.
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