Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device
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United States of America Patent
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Sep 20, 2016
Grant Date -
Apr 21, 2016
app pub date -
Dec 22, 2015
filing date -
Jul 2, 2010
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Abstract
A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.
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