Dielectric gap-filling process for semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11488855
APP PUB NO 20200365448A1
SERIAL NO

16983647

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Abstract

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A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Cheng-I Hsinchu, TW 53 445
Tang, Bang-Tai New Taipei, TW 14 74

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