Method of and apparatus for control of reactive sputtering deposition
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United States of America Patent
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Jun 22, 1982
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N/A
app pub date -
Jan 29, 1981
filing date -
Jan 29, 1981
priority date (Note) -
Expired
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Abstract
A method and apparatus for the control of reactive sputtering deposition of oxide-containing films, including the monitoring of and maintaining the constancy of the deposition rate and total pressure of the system by adjustment of the oxygen and argon input flow rates. Deposition rate is monitored by an activated quartz crystal, and behaves as a sensitive function of actual oxygen partial pressure. Stoichiometry, optical and electrical properties of the oxide-containing films are therefore controllable by maintaining constant oxygen partial pressure.
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