Light emitting element of cubic boron nitride
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United States of America Patent
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Dec 25, 1990
Issued Date -
N/A
app pub date -
Aug 3, 1989
filing date -
May 1, 1987
priority date (Note) -
Expired
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Abstract
A method for growing a single crystal of a cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.
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