Polysilicon-collector-on-insulator polysilicon-emitter bipolar
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United States of America Patent
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-
Jun 7, 1994
Issued Date -
N/A
app pub date -
Feb 2, 1993
filing date -
Aug 30, 1991
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A bipolar transistor is described having a thin subcollector formed from alternating polycrystalline semiconductor material and silicide material disposed over an insulating layer. Because the subcollector is thin the transistor is less sensitive to alpha-particle events. The transistor has enhanced inverse current gain since there is a polycrystalline contact to the incerse emitter.
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