Method of manufacturing dual gate oxide film
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United States of America Patent
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Jun 21, 2005
Grant Date -
Dec 16, 2004
app pub date -
Dec 18, 2003
filing date -
Jun 13, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distributed uniformly in the entire oxide films by carrying out a rapid annealing process in an inert atmosphere after carrying out an NO annealing process in order to prevent a phenomenon that nitrogen is not distributed uniformly and segregated in a gate oxide film for high voltage due to application of the NO annealing process after forming a gate oxide film for low voltage.
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