Semiconductor device and manufacturing method thereof
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United States of America Patent
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Feb 12, 2008
Grant Date -
Dec 30, 2004
app pub date -
Jul 29, 2004
filing date -
Jul 15, 2002
priority date (Note) -
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Abstract
A semiconductor device having a semiconductor substrate, at least one of a protruding electrode and wiring formed on one surface of the semiconductor substrate, and a first resin film formed on this surface. The first resin film has elasticity low enough to reduce stress induced by a difference in thermal expansion coefficient between the semiconductor substrate and the first resin film. A second resin film, having higher elasticity or higher strength than the first resin film, may be formed on the other surface of the semiconductor substrate.
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