Method of forming micropatterns
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United States of America Patent
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Aug 19, 1997
Issued Date -
N/A
app pub date -
Nov 29, 1995
filing date -
Jul 5, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A relatively thick metal oxide film of 100 nm or more is formed in the exposed portion of a resist film by supplying water and a metal alkoxide thereto, and then evaporating the alcohol generated by the supply of metal alkoxide to form a precise resist pattern from the metal oxide film. Water is absorbed into the exposed portion of the resist film in which the acid has been generated and the water is diffused deeper into the surface thereof. The growth of the metal oxide film proceeds toward the interior of the resist film. The water absorbed by the resist film is prevented from being evaporated, thereby forming a metal oxide film with a sufficiently large thickness to withstand dry etching.
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