Method of making low resistance substrate or buried layer contact
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United States of America Patent
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-
Jul 20, 1993
Grant Date -
N/A
app pub date -
Dec 5, 1991
filing date -
Dec 5, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An inexpensive and reliable technique for forming connections to a substrate or buried layer of a semiconductor structure employs a laser to melt a small, selected region of a lightly doped layer and a highly doped underlying layer. Extremely rapid diffusion of impurities and mixing of materials within the liquid phase of the melt quickly creates a uniformly doped conductive region when the melt is allowed to recrystallize.
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