Post-polish treatment for inhibiting copper corrosion
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United States of America Patent
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Sep 11, 2007
Grant Date -
May 11, 2006
app pub date -
Nov 10, 2004
filing date -
Nov 10, 2004
priority date (Note) -
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Abstract
Methods (102) are presented for protecting copper structures (26) from corrosion in the fabrication of semiconductor devices (2), wherein a thin semiconductor or copper-semiconductor alloy corrosion protection layer (30) is formed on an exposed surface (26a) of a copper structure (26) prior to performance of metrology operations (206), so as to inhibit corrosion of the copper structure (26). All or a portion of the corrosion protection layer (30) is then removed (214) in forming an opening in an overlying dielectric (44) in a subsequent interconnect layer.
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