MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof

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United States of America

PATENT NO 11916066
SERIAL NO

17591534

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Abstract

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An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

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Patent Owner(s)

  • STMICROELECTRONICS S.R.L.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rascuná, Simone Catania, IT 10 13
Saggio, Mario Giuseppe Aci Bonaccorsi, IT 68 152

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