Nitride CMP slurry having selectivity to nitride
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United States of America Patent
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Jun 8, 2004
Grant Date -
Jan 16, 2003
app pub date -
Jan 22, 2002
filing date -
Jun 29, 2001
priority date (Note) -
Expired
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Abstract
A nitride CMP slurry having selectivity to nitride over oxide. The slurry increases the polishing speed of a nitride film by varying the pH of the slurry, and polishes the nitride film faster than an oxide film by decreasing the polishing speed of the oxide film. As a result, the slurry provides a CMP process for manufacturing a high density and highly integrated semiconductor device and a structural development of new concept device.
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