Crystal growth method
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United States of America Patent
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May 12, 2009
Grant Date -
Jun 22, 2006
app pub date -
Dec 14, 2005
filing date -
May 1, 2001
priority date (Note) -
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Abstract
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
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