Metal interconnect of semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8319348
APP PUB NO 20100230824A1
SERIAL NO

12722643

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Abstract

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Provided are a metal interconnect of a semiconductor device and a method of fabricating the metal interconnect. The metal interconnect includes a metal line having a first end and a second end disposed on an opposite side to the first end, a via electrically connected to the metal line, and a non-active segment extending from the first end and including a void. Tensile stress is decreased to prevent a void from occurring under the via. Accordingly, line breakage due to electromigration is substantially prevented, thus improving electrical characteristics of the device.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Gilheyun Seoul, KR 33 516
Choi, Zungsun Seoul, KR 2 19
Jung, Hye Kyung Seoul, KR 2 19
Lee, Jongmyeong Seongnam-si, KR 22 149
Park, Byung-Lyul Seoul, KR 91 1858
Park, Jinho Yongin-si, KR 71 281

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