Interconnection of a semiconductor device and a method of forming thereof
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United States of America Patent
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Aug 27, 2002
Grant Date -
N/A
app pub date -
Jul 6, 2000
filing date -
Jul 9, 1999
priority date (Note) -
Expired
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Abstract
A method for forming an interconnection of a semiconductor device including a step of sequentially stacking a first insulation layer, a first semiconductor layer, a barrier metal layer and a second semiconductor layer on a semiconductor substrate, a step of forming an amorphous first tungsten silicide layer on the second semiconductor layer, a step of transforming the first tungsten silicide layer into a second tungsten silicide layer having a tetragonal crystal structure by an annealing process; a step of forming an etching mask on the second tungsten silicide layer, and a step of sequentially selectively etching the second tungsten silicide layer, the second semiconductor layer, the barrier metal layer and the first semiconductor layer by employing the etching mask.
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