Multideposition SACVD reactor
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United States of America Patent
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Aug 3, 2004
Issued Date -
N/A
app pub date -
Jul 12, 2001
filing date -
Jul 25, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There is disclosed a high throughput multideposition SACVD reactor that enables the rapid thermal deposition of dielectric materials such as Si.sub.3 N.sub.4, SiO.sub.2, and SiON and non-dielectric materials such as polysilicon onto a semiconductor substrate in the same chamber according to the desired sequence. Such a reactor has a processing chamber which is well adapted to single semiconductor wafer processing. The processing chamber includes an improved susceptor to support the wafer and a specific gas distribution system adapted to supply the different gases used in the deposition process and for cleaning. The improved susceptor consists of a standard carbon plate coated with a polysilicon film to protect it against said cleaning gases when they are aggressive to carbon. The present invention also encompasses a method of fabricating said improved susceptor.
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