Importance

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Abstract

In a solid-state image sensor of the type comprising an image pickup region comprising photosensor element arrays and charge transfer arrays, a charge storage region and a read-out region, two or more charge storage arrays are provided for each of the charge transfer arrays. The number of transfer electrodes in each of the charge storage arrays can be reduced to 1/n, where n is the number of charge storage arrays for each charge transfer array, as compared with the case in which one charge storage array is provided for each charge transfer array. As a consequence, the area of the charge storage region on a chip can be considerably reduced and the reduction of the transfer charge signal can be improved; that is, the error rate can be reduced.

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First Claim