Magnetic storage element responsive to spin polarized current
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United States of America Patent
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Aug 14, 2012
Grant Date -
Mar 24, 2011
app pub date -
Dec 1, 2010
filing date -
Mar 16, 2007
priority date (Note) -
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Abstract
The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.
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