Heterostructure self-assembled quantum dot
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United States of America Patent
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Nov 17, 2009
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Apr 23, 2007
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Apr 23, 2007
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Abstract
A method and device for a heterostructure self-assembled quantum dot based on inherent strain present in underlying self-assembled quantum dots for the purpose of modification and control of the properties of the self assembled quantum dots structures formed on semiconductor surfaces.
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