Semiconductor device and method of forming through-silicon-via with sacrificial layer
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United States of America Patent
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Jul 7, 2015
Grant Date -
Jul 17, 2014
app pub date -
Jan 16, 2013
filing date -
Jan 16, 2013
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Abstract
A semiconductor device can be formed by first providing a semiconductor wafer, and forming a conductive via into the semiconductor wafer. A portion of the semiconductor wafer can be removed so that the conductive via extends above a surface of the semiconductor wafer. A first insulating layer can be formed over the surface of the semiconductor wafer and the conductive via, followed by a second insulating layer, the second insulating layer having a different material composition than the first insulating layer. Portions of the insulating layers can be removed to expose the conductive via.
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