Semiconductor memory device having self-precharge function
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United States of America Patent
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Aug 16, 2005
Grant Date -
Nov 25, 2004
app pub date -
Nov 14, 2003
filing date -
Jan 30, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An XOR gate receives an input from a pair of read data lines to output a self-precharge signal when there is an increased potential difference between the paired read data lines. Thus, immediately after the increased potential difference between the paired read data lines occurs upon issuance of a read command, a precharge operation is autonomically performed. Therefore, no external precharge command is necessary when the read command is issued and thus a higher-speed operation is easily achieved.
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