Semiconductor memory device having burn-in mode operation stably accelerated

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5949731
SERIAL NO

08941215

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Current is reduced in driving a word line in stress acceleration testing such as burn-in, and the time required for the stress acceleration testing is reduced. For an address signal applied from an address buffer, a predetermined internal address signal bit is degenerated and a remaining address signal bit is rendered valid in response to an activation of a stress acceleration mode designation signal to simultaneously drive a desired number of word lines of all word lines to selected state. Any number of word lines can be simultaneously selected and hence current flowing in driving word lines can be reduced in the stress acceleration mode. In the stress acceleration mode of operation, bit line voltage and cell plate voltage are changed, and a current required for driving a plurality of word lines into a selected state is limited.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • MITSUBISHI DENKI KABUSHIKI KAISHA

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tsukude, Masaki Hyogo, JP 121 3025

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation