Semiconductor device and fabrication method of the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11751381
APP PUB NO 20220285358A1
SERIAL NO

17478147

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device includes: a bit line structure formed over a substrate; a storage node contact plug spaced apart from the bit line structure; and a nitride spacer positioned between the bit line structure and the storage node contact plug, wherein the nitride spacer has a higher silicon content in a portion adjacent to the storage node contact plug than in a portion adjacent to the bit line structure.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • SK HYNIX INC.

International Classification(s)

  • No Non-US Classification to display

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Seung Mi Gyeonggi-do, KR 30 41

Cited Art Landscape

Load Citation

Patent Citation Ranking

  • No Patent Citation Ranking to display

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Mar 5, 2027
7.5 Year Payment $3600.00 $1800.00 $900.00 Mar 5, 2031
11.5 Year Payment $7400.00 $3700.00 $1850.00 Mar 5, 2035
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00