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Abstract

A dielectric layer is formed on a semiconductor substrate by the steps of depositing water molecules and plasma-dissociated products of water on a dielectric layer-forming surface of a substrate according to a plasma enhanced CVD process, and forming a dielectric layer on the dielectric layer-forming surface of the substrate according to a CVD process using a silicon-containing gas and an oxidant as starting gases. Alternatively, water molecules alone may be deposited on the dielectric layer-forming surface according to a normal or reduced pressure CVD process used in placed of the above-mentioned CVD process. By this, the dielectric layer becomes so fluid that a final layer is free of any void and flat. In addition, the dielectric layer having a low concentration of hydroxyl group therein with a good quality can be formed at high productivity.

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