Method for vapor-phase growth
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United States of America Patent
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Jun 2, 1998
Grant Date -
N/A
app pub date -
Mar 21, 1996
filing date -
Mar 24, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.
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