Oxygen-chemical agent sensor
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United States of America Patent
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Oct 6, 2009
Grant Date -
Apr 19, 2007
app pub date -
Jul 20, 2005
filing date -
Jul 20, 2004
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Abstract
A gas sensing mechanism and a gas sensor based on a semiconducting carbon nanotube diode structure are disclosed. The gas sensor operates by detecting the change in conductivity characteristic of the current vs. voltage behavior of an I—N, or I—P junction, in the carbon nanotube. In the presence of electrophilic gas species at the I—N junction, or nucleophilic gas species at the I—P junction, a P—N, or N—P, junction is created by doping of the carbon nanotube by the respective gas species. The resulting change from the undoped, instrinsic i-type to p-type, or n-type, creates a diode structure whose conductivity characteristics can be measured with high accuracy and selectivity.
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