Method of making a semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Aug 1, 2000
Issued Date -
N/A
app pub date -
Jul 23, 1997
filing date -
Jan 28, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. The method uses substrate bonding to achieve the device.
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