Method for forming a metal electrical connector to a surface of a semiconductor device adjacent a sidewall of insulation material with metal creep-up extending up that sidewall, and related device
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United States of America Patent
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Dec 10, 1991
Issued Date -
N/A
app pub date -
Jun 12, 1990
filing date -
Aug 2, 1985
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Contact with a substrate or conductor underlying an opening in the insulating layer is made by depositing a thin film of high melting point metal using a selective vapor phase growth process so that the metal film grows across the exposed surface and then creeps-up the sidewalls of the insulating layer. Electrical contact is completed by covering the thin film with a thicker growth of high melting point metal, preferably using a second selective vapor phase growth process, and then depositing a conducting film over the insulating layer in electrical contact with the thicker growth of metal.
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