Method for forming a silicon oxide film on a silicon waffer
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United States of America Patent
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Mar 7, 1995
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N/A
app pub date -
Aug 11, 1992
filing date -
Aug 12, 1991
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Abstract
Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
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