Photodetector having a tunable junction region doping profile configured to improve contact resistance performance
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United States of America
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Jan 28, 2020
Grant Date -
Jul 11, 2019
app pub date -
Jan 10, 2018
filing date -
Jan 10, 2018
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Abstract
Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a semiconductor material that includes a first type of majority carrier. A doping enhancement layer is formed over a region of the semiconductor material, wherein the doping enhancement layer includes a first type of material. A dopant is accelerated sufficiently to drive the dopant through the doping enhancement layer into the region of the semiconductor material. Accelerating the dopant through the doping enhancement layer also drives some of the first type of material from the doping enhancement layer into the region of the semiconductor material. The dopant within the region and the first type of material within the region contribute to the region having a second type of majority carrier.
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