Semiconductor storage cell

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United States of America Patent

PATENT NO 4196441
SERIAL NO

05903359

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A programmable nonvolatile FET storage cell comprising crosswise to the ribbonlike source region as well as to the drain region a ribbonlike reading electrode and a separate ribbonlike writing electrode. Both electrodes are disposed upon a gate insulator layer into which a storage medium is embedded which is common to both electrodes.

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Patent Owner(s)

  • ITT INDUSTRIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adam, Fritz G Freiburg, DE 15 278

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