Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
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United States of America Patent
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Sep 22, 1981
Grant Date -
N/A
app pub date -
Jun 15, 1979
filing date -
Jun 15, 1979
priority date (Note) -
Expired
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Abstract
Integrated circuit resistor elements ideally suited for load devices in static MOS RAM cells are made in second-level polycrystalline silicon by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The second-level polysilicon is insulated from first-level polysilicon by multi-layer insulation; first, a thermal oxide layer provides better edge breakdown characteristics for transistors, then secondly a layer of doped deposited oxide provides improved step coverage, and finally an undoped deposited oxide is used to prevent out diffusion from doped oxide to second level polysilicon which would change the characteristics of the resistors.
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