High-voltage semiconductor structure
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United States of America Patent
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Jan 10, 2023
Grant Date -
N/A
app pub date -
Nov 24, 2020
filing date -
Nov 24, 2020
priority date (Note) -
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Abstract
A semiconductor structure includes a substrate, a semiconductor epitaxial layer, a semiconductor barrier layer, a first semiconductor device, a doped isolation region, and at least one isolation pillar. The substrate includes a core layer and a composite material layer, the semiconductor epitaxial layer is disposed on the substrate, and the semiconductor barrier layer is disposed on the semiconductor epitaxial layer. The first semiconductor device is disposed on the substrate, where the first semiconductor device includes a first semiconductor cap layer disposed on the semiconductor barrier layer. The doped isolation region is disposed at one side of the first semiconductor device. At least a portion of the isolation pillar is disposed in the doped isolation region, and the isolation pillar surrounds at least a portion of the first semiconductor device and penetrates the composite material layer.
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