Cleaning liquid for lithography and method for resist pattern formation
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United States of America Patent
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Sep 14, 2010
Grant Date -
Apr 24, 2008
app pub date -
Nov 29, 2005
filing date -
Dec 9, 2004
priority date (Note) -
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Abstract
This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formularepresent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
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