Semiconductor device

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United States of America Patent

PATENT NO 8334577
APP PUB NO 20090174035A1
SERIAL NO

12402196

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Abstract

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A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.

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Patent Owner(s)

  • EPISTAR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hata, Masayuki Kadoma, JP 178 2483
Kano, Takashi Hirakata, JP 60 684
Nomura, Yasuhiko Osaka, JP 83 810

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