Silicon carbide junction field effect transistors

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United States of America Patent

PATENT NO 11824094
APP PUB NO 20230147746A1
SERIAL NO

17913673

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Abstract

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Silicon carbide (SiC) junction field effect transistors (JFETs) are presented herein. A deep implant (e.g., a deep p-type implant) forms a JFET gate (106). MET gate and MET source (108) may be implemented with heavily doped n-type (N+) and heavily doped p-type (P+) implants, respectively. Termination regions may be implemented by using equipotential rings formed by deep implants (e.g., deep p-type implants).

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Patent Owner(s)

  • POWER INTEGRATIONS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Georgescu, Sorin S Gilroy, US 28 249
Varadarajan, Kamal Raj Fremont, US 9 46
Yang, Kuo-Chang Robert Campbell, US 10 14

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