Ternary content addressable memory cell
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United States of America Patent
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Sep 26, 2006
Grant Date -
Nov 11, 2004
app pub date -
May 6, 2004
filing date -
May 6, 2003
priority date (Note) -
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status (Latency Note)
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Abstract
Ternary CAM cells are provided. The ternary CAM cell includes a pair of half cells. Each of the half cells includes an isolation layer formed at a predetermined region of a semiconductor substrate to define a match cell active region. A search gate electrode and a node gate electrode are placed to cross over the match cell active region. A match line is electrically connected to the match cell active region, which is adjacent to the node gate electrode and is located opposite the search gate electrode. An SRAM cell is provided at the semiconductor substrate adjacent to the match cell active region. The node gate electrode is electrically connected to one of a pair of storage nodes of the SRAM cell.
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