MBE Source bakeout system
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United States of America Patent
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-
Feb 11, 1986
Grant Date -
N/A
app pub date -
Nov 10, 1983
filing date -
Nov 10, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A molecular beam epitaxy system including a growth chamber and an analysis chamber, both connected to ultrahigh vacuum pump systems. The analysis chamber includes a source outgassing mount, so that, while growth is proceeding in the growth chamber, a newly received source can be outgassed in the special mount connected to the analysis chamber. Preferably the exhausted cryogenic gases from the cryo shield in the growth chamber are used to cool the source outgassing mount on the analysis chamber, to minimize the contamination of the analysis chamber by contaminants outgassed.
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