Method of forming a high dielectric constant insulating film and method of producing semiconductor device using the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 11, 2004
Grant Date -
May 15, 2003
app pub date -
Sep 11, 2002
filing date -
Feb 6, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A high dielectric film is formed by utilizing atom injection into a film through ion implantation or the like, and heat treatment. For example, an SiO.sub.2 film 102 which is a thermal oxide film is formed on a silicon substrate 101, and then Zr ions (Zr.sup.+) are injected from a plasma 105 into the SiO.sub.2 film 102. Thereafter, by annealing the SiO.sub.2 film 102 and a Zr injected layer 103, injected Zr is diffused in the Zr injected layer 103 and then the SiO.sub.2 film 102 and the Zr injected layer 103 are as a whole changed into a high dielectric film 106 of a high dielectric constant formed of Zr--Si--O (silicate). By using the high dielectric film 106 as an insulating film for an MISFET, an MISFET having excellent gate leakage properties can be achieved.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully