Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor
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United States of America Patent
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Sep 29, 2009
Grant Date -
Feb 15, 2007
app pub date -
Aug 12, 2005
filing date -
Aug 12, 2005
priority date (Note) -
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Abstract
The present invention provides a semiconductor device, a method of manufacture therefore and an integrated circuit including the same. The semiconductor device (300), without limitation, may include a gate electrode (320) having a gate length (l) and a gate width (w) located over a substrate (310) and a gate electrode material feature (330) located adjacent a gate width (w) side of the gate electrode (320). The semiconductor device (300) may further include a silicide region (350) located over the substrate (310) proximate a side of the gate electrode (320), the gate electrode material feature (330) breaking the silicided region (350) into multiple silicide portions (353, 355, 358).
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