Magnetoresistive sensor having hard biased current perpendicular to the plane sensor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 5, 2002
Grant Date -
N/A
app pub date -
Mar 10, 2000
filing date -
Mar 10, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased. The method of the present invention is embodied in a method for fabricating a magnetic field sensor having the steps of forming a magnetoresistive element, forming a lower insulator with a main section and an end section over at least a portion of the magnetoresistive element, forming a magnetic bias layer over the main section of the lower insulator, and forming an upper insulator over the magnetic bias layer and over the end section of the lower insulator, such that the magnetic bias layer is electrically insulated from the magnetoresistive element.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully