Semiconductor structure, high electron mobility transistor and fabrication method thereof

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United States of America

PATENT NO 11967642
APP PUB NO 20230070031A1
SERIAL NO

17465881

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Abstract

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A semiconductor structure includes a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composition gradient layer. The buffer layer is disposed on a substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, the doped compound semiconductor layer is disposed on the barrier layer, and the composition gradient layer is disposed between the barrier layer and the doped compound semiconductor layer. The barrier layer and the composition gradient layer include a same group III element and a same group V element, and the atomic percentage of the same group III element in the composition gradient layer is gradually increased in the direction from the barrier layer to the doped compound semiconductor layer. A high electron mobility transistor and a fabrication method thereof are also provided.

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Patent Owner(s)

  • VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chih-Yen Hsinchu, TW 45 184
Chen, Chun-Yang New Taipei, TW 12 132
Lumbantoruan, Franky Juanda Sumatera Utara, ID 7 5
Wang, Tuan-Wei New Taipei, TW 5 4

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