Negative differential resistance load element
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United States of America Patent
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Aug 23, 2005
Issued Date -
N/A
app pub date -
Apr 19, 2004
filing date -
Dec 21, 2001
priority date (Note) -
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Abstract
A negative differential resistance device is disclosed which is particularly suited as a replacement in memory cells for conventional pull-up and load elements such as NDR diodes, passive resistors, and conventional FETs. The NDR device includes a charge trapping layer formed at or extremely near to an interface between a substrate (which can be silicon or SOI) and a gate insulation layer. The NDR device can be shut off during static operations to further reduce power dissipation.
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