Reference voltage generating circuit for integrated circuit

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7135913
APP PUB NO 20050093617A1
SERIAL NO

10964016

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A reference voltage generating circuit has a power supply voltage node to which a driving power supply voltage is intermittently applied. The circuit includes; a first current mirror section including a first MOS transistor of a first conductivity type having a source terminal connected to the power supply voltage node and a gate terminal connected to a drain terminal as a reference voltage output node, and a second MOS transistor of the first conductivity type having a gate terminal connected to the gate terminal of the first MOS transistor of the first conductivity type and a source terminal connected to the power supply voltage node; a second current mirror section including a third MOS transistor of a second conductivity type having a drain terminal connected to the reference voltage output node and a source terminal connected to a first current path to which a first resistor and a first diode are serially connected, and a fourth MOS transistor of the second conductivity type having a gate terminal and a drain terminal connected to the gate terminal of the third MOS transistor of the second conductivity type in common and a source terminal connected to the second current path to which a second diode is serially connected; and a charge transporting section connected between the gate terminal of the first MOS transistor of the first conductivity type in the first current mirror section and the gate terminal of the fourth MOS transistor of the second conductivity type in the second current mirror section.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Nam-Jong Yongin-si, KR 26 209
Min, Young-Sun Seoul, KR 29 114

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