Very large area/volume microwave ECR plasma and ion source
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United States of America Patent
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Feb 24, 2009
Grant Date -
N/A
app pub date -
Dec 16, 2005
filing date -
Dec 16, 2005
priority date (Note) -
Expired
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Abstract
The present invention is an apparatus and method for producing very large area and large volume plasmas. The invention utilizes electron cylcotron resonances in conjunction with permanent magnets to produce dense, uniform plasmas for long life ion thruster applications or for plasma processing applications such as etching, deposition, ion milling and ion implantation. The large area source is at least five times larger than the 12-inch wafers being processed to date. Its rectangular shape makes it easier to accommodate to materials processing than sources that are circular in shape. The source itself represents the largest ECR ion source built to date. It is electrodeless and does not utilize electromagnets to generate the ECR magnetic circuit, nor does it make use of windows.
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