Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips
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United States of America Patent
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Feb 2, 2010
Grant Date -
May 21, 2009
app pub date -
Oct 27, 2008
filing date -
Sep 30, 2002
priority date (Note) -
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Abstract
Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.
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